Chin. J. Semicond. > 2005, Volume 26 > Issue 4 > 645-650

Twinning in Low-Temperature MOCVD Grown GaN on (001) GaAs Substrate

Shen Xiaoming , Wang Yutian , Wang Jianfeng , Liu Jianping , Zhang Jicai , Guo Liping , Jia Quanjie , Jiang Xiaoming , Hu Zhengfei and Y

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Key words: X-ray diffraction, metalorganic chemical vapor deposition, nitrides

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Received: 19 August 2015 Revised: Online: Published: 01 April 2005

Article Navigation > Journal of Semiconductors > 2005 > 26(4): 645-650

Shen Xiaoming, Wang Yutian, Wang Jianfeng, Liu Jianping, Zhang Jicai, Guo Liping, Jia Quanjie, Jiang Xiaoming, Hu Zhengfei, Y. Twinning in Low-Temperature MOCVD Grown GaN on (001) GaAs Substrate[J]. 半导体学报(英文版), 2005, 26(4): 645-650.

Citation:

Shen Xiaoming, Wang Yutian, Wang Jianfeng, Liu Jianping, Zhang Jicai, Guo Liping, Jia Quanjie, Jiang Xiaoming, Hu Zhengfei, Y. Twinning in Low-Temperature MOCVD Grown GaN on (001) GaAs Substrate[J]. 半导体学报(英文版), 2005, 26(4): 645-650.

Shen Xiaoming, Wang Yutian, Wang Jianfeng, Liu Jianping, Zhang Jicai, Guo Liping, Jia Quanjie, Jiang Xiaoming, Hu Zhengfei, Y. Twinning in Low-Temperature MOCVD Grown GaN on (001) GaAs Substrate[J]. 半导体学报(英文版), 2005, 26(4): 645-650.

Citation:

Shen Xiaoming, Wang Yutian, Wang Jianfeng, Liu Jianping, Zhang Jicai, Guo Liping, Jia Quanjie, Jiang Xiaoming, Hu Zhengfei, Y. Twinning in Low-Temperature MOCVD Grown GaN on (001) GaAs Substrate[J]. 半导体学报(英文版), 2005, 26(4): 645-650.

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