基于SOI材料的刻蚀光栅分波器的制作工艺

王文辉; 唐衍哲; 戈肖鸿; 吴亚明; 杨建义; 王跃林

Chin. J. Semicond. > 2005, Volume 26 > Issue 1 > 138-142

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基于SOI材料的刻蚀光栅分波器的制作工艺

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Abstract: 研究了基于绝缘材料上的硅（SOI）材料的平面波导刻蚀光栅分波器的主要制作工艺．利用电感耦合等离子体刻蚀（ICP）技术，在SOI材料上制作了垂直度大于89°的光滑的光栅槽面．氧化抛光后刻蚀侧壁的表面均方根粗糙度（RMS）有3nm的改善，达到7.27nm（采样面积6.2μm×26μm）．通过采用集成波导拐弯微镜代替弯曲波导使1×4分波器的器件尺寸仅为20mm×2.5mm．测试结果表明器件实现了分波功能．

1	Ultra compact triplexing filters based on SOI nanowire AWGs Zhang Jiashun, An Junming, Zhao Lei, Song Shijiao, Wang Liangliang, et al. Journal of Semiconductors, 2011, 32(4): 044009. doi: 10.1088/1674-4926/32/4/044009
2	SOI-based radial-contour-mode micromechanical disk resonator Jia Yingqian, Zhao Zhengping, Yang Yongjun, Hu Xiaodong, Li Qian, et al. Journal of Semiconductors, 2011, 32(11): 115001. doi: 10.1088/1674-4926/32/11/115001
3	Influence of nitrogen dose on the charge density of nitrogen-implanted buried oxide in SOI wafers Zheng Zhongshan, Liu Zhongli, Li Ning, Li Guohua, Zhang Enxia, et al. Journal of Semiconductors, 2010, 31(2): 026001. doi: 10.1088/1674-4926/31/2/026001
4	New Technology for Fabricating a Thin Film/Thick BOX Silicon-on-Insulator Wei Xing, Wang Xiang, Chen Meng, Chen Jing, Zhang Miao, et al. Journal of Semiconductors, 2008, 29(7): 1350-1353.
5	Triplexers Based on SOI Flattop AWGs An Junming, Wu Yuanda, Li Jian, Wang Hongjie, Li Jianguang, et al. Journal of Semiconductors, 2008, 29(8): 1504-1506.
6	Microfabrication and Evaluation of a Silicon MicroelectrodeBased on SOI Wafer Sui Xiaohong, Chen Hongda Journal of Semiconductors, 2008, 29(11): 2169-2174.
7	Effects of Si Ion Implantation on the Total-Dose Radiation Properties of SIMOX SOI Materials Yang Hui, Zhang Enxia, Zhang Zhengxuan Chinese Journal of Semiconductors , 2007, 28(3): 323-326.
8	Fabrication of a Novel SOI Material with Non-Planar Buried Oxide Layer Guo Yufeng, Li Zhaoji, Zhang Bo, Liu Yong Chinese Journal of Semiconductors , 2007, 28(9): 1415-1419.
9	Fabrication of High-Density Transmission Gratings for X-Ray Diffraction Zhu Xiaoli, Ma Jie, Cao Leifeng, Yang Jiamin, Xie Changqing, et al. Chinese Journal of Semiconductors , 2007, 28(12): 2006-2010.
10	Fabrication of Monolithic Silicon Multi-Sensor on SOI Wafer Xu Jingbo, Zhao Yulong, Jiang Zhuangde, Zhang Dacheng, Yang Fang, et al. Chinese Journal of Semiconductors , 2007, 28(2): 302-307.
11	Direct Bonded SOI Wafers Technology Huang Chenhung, Chiou Herngde Chinese Journal of Semiconductors , 2006, 27(S1): 392-395.
12	Fabrication of SOI Material Using Low Temperature Bonding Technology Zhan Da, Ma Xiaobo, Liu Weili, Song Zhitang, Feng Songlin, et al. Chinese Journal of Semiconductors , 2006, 27(S1): 189-192.
13	808nm大功率半导体激光器腔面光学膜工艺舒雄文, 徐晨, 徐遵图, 朱彦旭, 沈光地, et al. Chinese Journal of Semiconductors , 2005, 26(3): 571-575.
14	注氮工艺对SOI材料抗辐照性能的影响 Chinese Journal of Semiconductors , 2005, 26(6): 1269-1272.
15	基于硅微加工工艺的微热板传热分析余隽, 唐祯安, 陈正豪, 魏广芬, 王立鼎, et al. Chinese Journal of Semiconductors , 2005, 26(1): 192-196.
16	利用光聚合反应制作表面平整的聚合物光栅周进波, 孙长征, 熊兵, 王健, 罗毅, et al. Chinese Journal of Semiconductors , 2005, 26(2): 363-367.
17	刻蚀衍射光栅解复用器的偏振色散分析庞冬青, 宋军, 何赛灵 Chinese Journal of Semiconductors , 2005, 26(1): 133-137.
18	适用于阵列波导光栅制作的厚SiO_2陡直刻蚀技术 Chinese Journal of Semiconductors , 2003, 24(11): 1222-1225.
19	用于制备SOI材料的基于硅片键合和双层多孔硅剥离的薄外延硅膜转移技术(英文) Chinese Journal of Semiconductors , 2001, 22(12): 1501-1506.
20	利用SOI材料提高触觉传感阵列的性能 Chinese Journal of Semiconductors , 1991, 12(11): 695-699.

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王文辉, 唐衍哲, 戈肖鸿, 吴亚明, 杨建义, 王跃林. 基于SOI材料的刻蚀光栅分波器的制作工艺[J]. Journal of Semiconductors, 2005, 26(1): 138-142.

王文辉, 唐衍哲, 戈肖鸿, 吴亚明, 杨建义, 王跃林, 基于SOI材料的刻蚀光栅分波器的制作工艺[J]. Journal of Semiconductors, 2005, 26(1), 138-142

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Received: 19 August 2015 Revised: Online: Published: 01 January 2005

研究了基于绝缘材料上的硅（SOI）材料的平面波导刻蚀光栅分波器的主要制作工艺．利用电感耦合等离子体刻蚀（ICP）技术，在SOI材料上制作了垂直度大于89°的光滑的光栅槽面．氧化抛光后刻蚀侧壁的表面均方根粗糙度（RMS）有3nm的改善，达到7.27nm（采样面积6.2μm×26μm）．通过采用集成波导拐弯微镜代替弯曲波导使1×4分波器的器件尺寸仅为20mm×2.5mm．测试结果表明器件实现了分波功能．

基于SOI材料的刻蚀光栅分波器的制作工艺

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