Chin. J. Semicond. > 1994, Volume 15 > Issue 5 > 312-316
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气态源分子束外延（AlGa）InP和GaInP／AlInP多量子阱材料

袁瑞霞，阎春辉，国红熙，李晓兵，朱世荣，李灵肖，曾一平，孔梅影

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    Received: 18 August 2015 Revised: Online: Published: 01 May 1994

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      Article Navigation >  Journal of Semiconductors  > 1994  >  15(5): 312-316
      袁瑞霞，阎春辉，国红熙，李晓兵，朱世荣，李灵肖，曾一平，孔梅影. 气态源分子束外延（AlGa）InP和GaInP／AlInP多量子阱材料[J]. 半导体学报(英文版), 1994, 15(5): 312-316.
      Citation:
      袁瑞霞，阎春辉，国红熙，李晓兵，朱世荣，李灵肖，曾一平，孔梅影. 气态源分子束外延（AlGa）InP和GaInP／AlInP多量子阱材料[J]. 半导体学报(英文版), 1994, 15(5): 312-316.
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      • Received Date: 2015-08-18

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