PAPERS
Xue Chunlai, Shi Wenhua, Yao Fei, Cheng Buwen, Wang Hongjie, Yu Jinzhong and Wang Qiming
Abstract: A large area multi-finger configuration power SiGe HBT device (with an emitter area of about 880μm2) was fabricated with 2μm double-mesa technology.The maximum DC current gain β is 214.The BVCEO is up to 10V,and the BVCBO is up to 16V with a collector doping concentration of 1e17cm-3 and collector thickness of 400nm.The device exhibits a maximum oscillation frequency fmax of 19.3GHz and a cut-off frequency fT of 18.0GHz at a DC bias point of IC=30mA and VCE=3V.MSG (maximum stable gain) is 24.5dB,and U (Mason unilateral gain) is 26.6dB at 1GHz.Due to the novel distribution layout,no notable current gain fall-off or thermal effects are observed in the I-V characteristics at high collector current.
Key words: SiGe, HBT, power, double-mesa technology, multi-finger
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Received: 18 August 2015 Revised: 20 November 2006 Online: Published: 01 April 2007
| Citation: |
Xue Chunlai, Shi Wenhua, Yao Fei, Cheng Buwen, Wang Hongjie, Yu Jinzhong, Wang Qiming. A Multi-Finger Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications[J]. Journal of Semiconductors, 2007, 28(4): 496-499.
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Xue C L, Shi W H, Yao F, Cheng B W, Wang H J, Yu J Z, Wang Q M. A Multi-Finger Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications[J]. Chin. J. Semicond., 2007, 28(4): 496.
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