Chin. J. Semicond. > 2000, Volume 21 > Issue 4 > 369-372
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Au-GaN肖特基结的伏安特性

林兆军 , 张太平 , 武国英 , 王玮 , 阎桂珍 , 孙殿照 , 张建平 and 张国义

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Key words: MBE, MOCVD, GaN, 肖特基结, 伏安特性

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    Received: 20 August 2015 Revised: Online: Published: 01 April 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(4): 369-372
      林兆军, 张太平, 武国英, 王玮, 阎桂珍, 孙殿照, 张建平, 张国义. Au-GaN肖特基结的伏安特性[J]. 半导体学报(英文版), 2000, 21(4): 369-372.
      Citation:
      林兆军, 张太平, 武国英, 王玮, 阎桂珍, 孙殿照, 张建平, 张国义. Au-GaN肖特基结的伏安特性[J]. 半导体学报(英文版), 2000, 21(4): 369-372.
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      • Received Date: 2015-08-20

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