Chin. J. Semicond. > 2005, Volume 26 > Issue 10 > 1949-1953
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导带的非抛物线性对应变InxGa1-xAs/AlAs量子阱红外谱的影响

杨晓峰 , 温廷敦 and 张文栋

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Key words: 8×8 k·p模型, 非抛物线性, 红外吸收

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    Received: 19 August 2015 Revised: Online: Published: 01 October 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(10): 1949-1953
      杨晓峰, 温廷敦, 张文栋. 导带的非抛物线性对应变InxGa1-xAs/AlAs量子阱红外谱的影响[J]. 半导体学报(英文版), 2005, 26(10): 1949-1953.
      Citation:
      杨晓峰, 温廷敦, 张文栋. 导带的非抛物线性对应变InxGa1-xAs/AlAs量子阱红外谱的影响[J]. 半导体学报(英文版), 2005, 26(10): 1949-1953.
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      • Received Date: 2015-08-19

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