Chin. J. Semicond. > 1999, Volume 20 > Issue 12 > 1049-1053

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GSMBE原位生长SiGeHBT材料

黄大定 , 刘金平 , 李建平 , 林燕霞 , 刘学锋 , 李灵霄 , 孙殿照 , 孔梅影 and 林兰英

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    Received: 19 August 2015 Revised: Online: Published: 01 December 1999

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      Article Navigation >  Journal of Semiconductors  > 1999  >  20(12): 1049-1053
      黄大定, 刘金平, 李建平, 林燕霞, 刘学锋, 李灵霄, 孙殿照, 孔梅影, 林兰英. GSMBE原位生长SiGeHBT材料[J]. 半导体学报(英文版), 1999, 20(12): 1049-1053.
      Citation:
      黄大定, 刘金平, 李建平, 林燕霞, 刘学锋, 李灵霄, 孙殿照, 孔梅影, 林兰英. GSMBE原位生长SiGeHBT材料[J]. 半导体学报(英文版), 1999, 20(12): 1049-1053.
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      • Received Date: 2015-08-19

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