Chin. J. Semicond. > 1996, Volume 17 > Issue 6 > 476-480

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GaAs表面S钝化方法：S气氛辉光放电法

陈溪滢，曹华，徐前江，王杰，朱炜，曹先安，张甫龙，丁训民，侯晓远，陆明

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    Received: 18 August 2015 Revised: Online: Published: 01 June 1996

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      Article Navigation >  Journal of Semiconductors  > 1996  >  17(6): 476-480
      陈溪滢，曹华，徐前江，王杰，朱炜，曹先安，张甫龙，丁训民，侯晓远，陆明. GaAs表面S钝化方法：S气氛辉光放电法[J]. 半导体学报(英文版), 1996, 17(6): 476-480.
      Citation:
      陈溪滢，曹华，徐前江，王杰，朱炜，曹先安，张甫龙，丁训民，侯晓远，陆明. GaAs表面S钝化方法：S气氛辉光放电法[J]. 半导体学报(英文版), 1996, 17(6): 476-480.
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      • Received Date: 2015-08-18

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