Pattern Fabrication on PLZT Films and Their Properties by a Direct Patterning Process

Zhang Weihua; Shi Chunmei; Yuan Yuan; Zhao Gaoyang; Sheng Shuyue

J. Semicond. > 2008, Volume 29 > Issue 6 > 1189-1193

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Pattern Fabrication on PLZT Films and Their Properties by a Direct Patterning Process

Zhang Weihua, Shi Chunmei, Yuan Yuan, Zhao Gaoyang and Sheng Shuyue

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Abstract: The photosensitive Pb0.91La0.09(Zr0.65Ti0.35)O.3 (PLZT) precursor sols are prepared by a modified sol-gel process with benzoylacetone as chemical modification to form a coordination chelate structure of metal-salt with PVP as an addition agent for suppressing film cracks.The patterns of PLZT gel films are prepared by direct patterning process and single dip-coating,and the PLZT film patterns with perovskite structure on Pt/TiO2/SiO2/Si substrate are obtained after heat-treatment.The PLZT film’s pattern thickness is about 260nm,of which the remnant polarization,coercive field,and fatigue behavior are about 6.7μC/cm2,77kV/cm,and 1E7 respectively.The dielectric loss and dielectric constant are 0.02 and 356 at 10kHz,respectively.

Key words: PLZT films, sol-gel, fine-patterning, photosensitivity

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Zhang Weihua, Shi Chunmei, Yuan Yuan, Zhao Gaoyang, Sheng Shuyue. Pattern Fabrication on PLZT Films and Their Properties by a Direct Patterning Process[J]. Journal of Semiconductors, 2008, 29(6): 1189-1193.

Zhang W H, Shi C M, Yuan Y, Zhao G Y, Sheng S Y. Pattern Fabrication on PLZT Films and Their Properties by a Direct Patterning Process[J]. J. Semicond., 2008, 29(6): 1189.

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Received: 18 August 2015 Revised: 26 November 2007 Online: Published: 01 June 2008

The photosensitive Pb0.91La0.09(Zr0.65Ti0.35)O.3 (PLZT) precursor sols are prepared by a modified sol-gel process with benzoylacetone as chemical modification to form a coordination chelate structure of metal-salt with PVP as an addition agent for suppressing film cracks.The patterns of PLZT gel films are prepared by direct patterning process and single dip-coating,and the PLZT film patterns with perovskite structure on Pt/TiO2/SiO2/Si substrate are obtained after heat-treatment.The PLZT film’s pattern thickness is about 260nm,of which the remnant polarization,coercive field,and fatigue behavior are about 6.7μC/cm2,77kV/cm,and 1E7 respectively.The dielectric loss and dielectric constant are 0.02 and 356 at 10kHz,respectively.

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