| Citation: |
Wu Tao, Du Gang, Liu Xiaoyan, Kang Jinfeng, Han Ruqi. Characteristics of Nanometer MOSFETs with Mechanical Strain in the Channel[J]. Journal of Semiconductors, 2006, 27(S1): 415-418.
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Wu T, Du G, Liu X Y, Kang J F, Han R Q. Characteristics of Nanometer MOSFETs with Mechanical Strain in the Channel[J]. Chin. J. Semicond., 2006, 27(13): 415.
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Characteristics of Nanometer MOSFETs with Mechanical Strain in the Channel
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Abstract
The characteristics of typical nanometer p- and n-channel strained Si MOSFETs with mechanical stress applied in the channel are simulated by a commercial device simulator ISE. The impacts of the direction and magnitude of the stress on the device performances such as threshold voltage and sub-threshold characteristics are investigated.-
Keywords:
- MOSFETs,
- strain,
- stress,
- deformation potential theory
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References
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Proportional views
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