| Citation: |
Jiao Shilong, Chen Tangsheng, Qian Feng, Feng Ou, Jiang Youquan, Li Fuxiao, Shao Kai, Ye Yutang. 5Gb/s Monolithically Integrated GaAs MSM/PHEMT 850nm Optical Receiver Front End[J]. Journal of Semiconductors, 2007, 28(4): 587-591.
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Jiao S L, Chen T S, Qian F, Feng O, Jiang Y Q, Li F X, Shao K, Ye Y T. 5Gb/s Monolithically Integrated GaAs MSM/PHEMT 850nm Optical Receiver Front End[J]. Chin. J. Semicond., 2007, 28(4): 587.
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5Gb/s Monolithically Integrated GaAs MSM/PHEMT 850nm Optical Receiver Front End
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Abstract
An 850nm monolithically integrated optical receiver front end is developed with a 0.5μm GaAs PHEMT process,which comprises a metal-semiconductor-metal (MSM) photodetector and a distributed amplifier.The photodetector has a photosensitive area and capacitance of 50μm×50μm and 0.17pF,respectively,as well as a dark current of less than 17nA under a bias of 4V.The distributed amplifier has a -3dB bandwidth close to 20GHz,with a transimpedance of 46dBΩ.In the range of 50MHz ~16GHz,both the input and output voltage standing wave ratio are less than 2.The measured noise figure varies form 3.03 to 6.5dB.The output eye diagrams for 2.5Gb/s and 5Gb/s NRZ pseudorandom binary sequence are also obtained. -
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