Chin. J. Semicond. > 2006, Volume 27 > Issue 5 > 910-915

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Bifurcation and Dynamic Stability of a Light-InjectionMQW Semiconductor Laser

Yan Senlin

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Abstract: The bifurcation,dynamic stability,and other properties of a four-dimensional model of an external light injection multi-quantum-well (MQW) semiconductor laser are studied.Bifurcation is numerically simulated via varying the external injection light intensity,the frequency detuning,the linewidth enhancement parameter,and the drive current of the laser.The route to chaos from bifurcation,single-period,and multi-period is illustrated,and a chaotic spectrum is also shown.The maximum locking frequency domain formula is given.A perturbation equation for a four-dimensional model of an external light-injection MQW laser,and eigenvalue equation and its root are demonstrated.The Hopf bifurcation condition of the laser is theoretically given.The dynamic stability of the laser is theoretically and numerically analyzed.Laser oscillation frequencies in single-period,dual-period,and hexa-period states are obtained by simulation.

Key words: multi-quantum-well laserbifurcationstabilitychaos

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    Received: 20 August 2015 Revised: Online: Published: 01 May 2006

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      Yan Senlin. Bifurcation and Dynamic Stability of a Light-InjectionMQW Semiconductor Laser[J]. Journal of Semiconductors, 2006, 27(5): 910-915. ****Yan S L. Bifurcation and Dynamic Stability of a Light-InjectionMQW Semiconductor Laser[J]. Chin. J. Semicond., 2006, 27(5): 910.
      Citation:
      Yan Senlin. Bifurcation and Dynamic Stability of a Light-InjectionMQW Semiconductor Laser[J]. Journal of Semiconductors, 2006, 27(5): 910-915. ****
      Yan S L. Bifurcation and Dynamic Stability of a Light-InjectionMQW Semiconductor Laser[J]. Chin. J. Semicond., 2006, 27(5): 910.

      Bifurcation and Dynamic Stability of a Light-InjectionMQW Semiconductor Laser

      • Received Date: 2015-08-20

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