Chin. J. Semicond. > 2003, Volume 24 > Issue 1 > 49-53
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大直径直拉硅中氮对原生氧沉淀的影响

余学功 , 杨德仁 , 杨建松 , 马向阳 , 李立本 and 阙端麟

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Key words: 掺氮, 直拉硅, 原生氧沉淀

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    Received: 20 August 2015 Revised: Online: Published: 01 January 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(1): 49-53
      余学功, 杨德仁, 杨建松, 马向阳, 李立本, 阙端麟. 大直径直拉硅中氮对原生氧沉淀的影响[J]. 半导体学报(英文版), 2003, 24(1): 49-53.
      Citation:
      余学功, 杨德仁, 杨建松, 马向阳, 李立本, 阙端麟. 大直径直拉硅中氮对原生氧沉淀的影响[J]. 半导体学报(英文版), 2003, 24(1): 49-53.
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      • Received Date: 2015-08-20

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