Chin. J. Semicond. > 1991, Volume 12 > Issue 1 > 28-36
|

CONTENTS

利用电导技术研究快速热氮化二氧化硅与硅界面的性质

刘志宏 , 马志坚 , 黎沛涛 , 郑耀宗 and 刘百勇

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2310 Times PDF downloads: 1260 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 January 1991

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1991  >  12(1): 28-36
      刘志宏, 马志坚, 黎沛涛, 郑耀宗, 刘百勇. 利用电导技术研究快速热氮化二氧化硅与硅界面的性质[J]. 半导体学报(英文版), 1991, 12(1): 28-36.
      Citation:
      刘志宏, 马志坚, 黎沛涛, 郑耀宗, 刘百勇. 利用电导技术研究快速热氮化二氧化硅与硅界面的性质[J]. 半导体学报(英文版), 1991, 12(1): 28-36.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return