Chin. J. Semicond. > 2005, Volume 26 > Issue 10 > 1968-1974
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TLP应力下深亚微米GGNMOSFET特性的仿真

朱志炜 and 郝跃

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Key words: 静电放电, 传输线脉冲, 氧化层电场

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    Received: 19 August 2015 Revised: Online: Published: 01 October 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(10): 1968-1974
      朱志炜, 郝跃. TLP应力下深亚微米GGNMOSFET特性的仿真[J]. 半导体学报(英文版), 2005, 26(10): 1968-1974.
      Citation:
      朱志炜, 郝跃. TLP应力下深亚微米GGNMOSFET特性的仿真[J]. 半导体学报(英文版), 2005, 26(10): 1968-1974.
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      • Received Date: 2015-08-19

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