Chin. J. Semicond. > 2004, Volume 25 > Issue 8 > 961-966
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氮掺杂SiC厚膜的制备及其热电特性

王新华

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Key words: 碳化硅, 薄膜, PVD, 热电性能

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    Received: 19 August 2015 Revised: Online: Published: 01 August 2004

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      Article Navigation >  Journal of Semiconductors  > 2004  >  25(8): 961-966
      王新华. 氮掺杂SiC厚膜的制备及其热电特性[J]. 半导体学报(英文版), 2004, 25(8): 961-966.
      Citation:
      王新华. 氮掺杂SiC厚膜的制备及其热电特性[J]. 半导体学报(英文版), 2004, 25(8): 961-966.
      shu

      • Received Date: 2015-08-19

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