Chin. J. Semicond. > 2005, Volume 26 > Issue 4 > 667-671
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Compact Threshold Voltage Model for FinFETs

Zhang Dawei and Tian Lilin，and Yu Zhiping

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Key words: FinFET, 2D analytical electrostatic analysis, compact model, threshold voltage

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    张玉明, 张义门, 罗晋生. SiC肖特基势垒二极管的研制[J]. 半导体学报(英文版), 1999, 20(11): 1040-1043.
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    Received: 19 August 2015 Revised: Online: Published: 01 April 2005

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      Article Navigation >  Journal of Semiconductors  > 2005  >  26(4): 667-671
      张玉明, 张义门, 罗晋生. SiC肖特基势垒二极管的研制[J]. 半导体学报(英文版), 1999, 20(11): 1040-1043.
      Citation:
      Zhang Dawei, Tian Lilin，and Yu Zhiping. Compact Threshold Voltage Model for FinFETs[J]. 半导体学报(英文版), 2005, 26(4): 667-671.
      shu

      • Received Date: 2015-08-19

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