Chin. J. Semicond. > 1989, Volume 10 > Issue 11 > 846-852
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离子束混合诱导稀土金属Ce与Si的界面反应及硅化物的形成

杨熙宏 , 毛思宁 , 陈坚 , 刘家瑞 , 杨锋 and 许天冰

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    Received: 19 August 2015 Revised: Online: Published: 01 November 1989

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      Article Navigation >  Journal of Semiconductors  > 1989  >  10(11): 846-852
      杨熙宏, 毛思宁, 陈坚, 刘家瑞, 杨锋, 许天冰. 离子束混合诱导稀土金属Ce与Si的界面反应及硅化物的形成[J]. 半导体学报(英文版), 1989, 10(11): 846-852.
      Citation:
      杨熙宏, 毛思宁, 陈坚, 刘家瑞, 杨锋, 许天冰. 离子束混合诱导稀土金属Ce与Si的界面反应及硅化物的形成[J]. 半导体学报(英文版), 1989, 10(11): 846-852.
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      • Received Date: 2015-08-19

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