Chin. J. Semicond. > 1996, Volume 17 > Issue 3 > 161-165

CONTENTS

Al_xGa_(1-x)As/GaAs价带偏移的理论计算

王仁智,郑永梅

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1

Anisotropic optical and electric properties of β-gallium oxide

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2

Amorphous gallium oxide homojunction-based optoelectronic synapse for multi-functional signal processing

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3

Temperature-dependent electrical properties of β-Ga2O3 Schottky barrier diodes on highly doped single-crystal substrates

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4

A review of the most recent progresses of state-of-art gallium oxide power devices

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5

Growth properties of gallium oxide on sapphire substrate by plasma-assisted pulsed laser deposition

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6

Donor impurity-related optical absorption coefficients and refractive index changes in a rectangular GaAs quantum dot in the presence of electric field

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7

Effect of Co doping on structural, optical, electrical and thermal properties of nanostructured ZnO thin films

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8

Performance analysis of silicon nanowire transistors considering effective oxide thickness of high-k gate dielectric

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9

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10

A simulation of doping and trap effects on the spectral response of AlGaN ultraviolet detectors

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11

Effect of rhenium doping on various physical properties of single crystals of MoSe2

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12

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13

Characterisation of the optical properties of InGaN MQW structures using a combined SEM and CL spectral mapping system

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14

As2S8 planar waveguide: refractive index changes following an annealing and irradiation and annealing cycle, and light propagation features

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15

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16

Electrical and optical properties of deep ultraviolet transparent conductive Ga2O3/ITO films by magnetron sputtering

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17

Temperature: a critical parameter affecting the optical properties of porous silicon

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18

A 1×4 Polymeric Digital Optical Switch Basedon the Thermo-Optic Effect

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19

Transport Properties of Two Coupled Quantum Dots Under Optical Pumping

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20

Resonant Raman Scattering and Photoluminescence Emissions from Above Bandgap Levels in Dilute GaAsN Alloys

Tan P H, Luo X D, Ge W K, Xu Z Y, Zhang Y, et al.

Chinese Journal of Semiconductors , 2006, 27(3): 397-402.

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2. Xu, W., Peng, T., Chen, L. et al. Aqueous-solution-synthesized gallium oxide dielectrics for high-mobility thin-film transistors enhanced by phosphorus incorporation. Applied Physics Letters, 2022, 121(16): 163301. doi:10.1063/5.0118814
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    Yitian Bao, Xiaorui Wang, Shijie Xu. Sub-bandgap refractive indexes and optical properties of Si-doped β-Ga2O3 semiconductor thin films[J]. Journal of Semiconductors, 2022, 43(6): 062802. doi: 10.1088/1674-4926/43/6/062802
    Y T Bao, X R Wang, S J Xu. Sub-bandgap refractive indexes and optical properties of Si-doped β-Ga2O3 semiconductor thin films[J]. J. Semicond, 2022, 43(6): 062802. doi: 10.1088/1674-4926/43/6/062802
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    Received: 18 August 2015 Revised: Online: Published: 01 March 1996

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      Yitian Bao, Xiaorui Wang, Shijie Xu. Sub-bandgap refractive indexes and optical properties of Si-doped β-Ga2O3 semiconductor thin films[J]. Journal of Semiconductors, 2022, 43(6): 062802. doi: 10.1088/1674-4926/43/6/062802 ****Y T Bao, X R Wang, S J Xu. Sub-bandgap refractive indexes and optical properties of Si-doped β-Ga2O3 semiconductor thin films[J]. J. Semicond, 2022, 43(6): 062802. doi: 10.1088/1674-4926/43/6/062802
      Citation:
      王仁智,郑永梅. Al_xGa_(1-x)As/GaAs价带偏移的理论计算[J]. 半导体学报(英文版), 1996, 17(3): 161-165.

      • Received Date: 2015-08-18

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