| Citation: |
Hai Chaohe, Han Zhengsheng, Zhou Xiaoyin, Zhao Lixin, Li Duoli, Bi Jinshun. Study of Improved Performance of SOI Devices and Circuits[J]. Journal of Semiconductors, 2006, 27(S1): 322-327.
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Hai C H, Han Z S, Zhou X Y, Zhao L X, Li D L, Bi J S. Study of Improved Performance of SOI Devices and Circuits[J]. Chin. J. Semicond., 2006, 27(13): 322.
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Study of Improved Performance of SOI Devices and Circuits
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Abstract
Based on the analysis of floating body effect (FBE),breakdown characteristics,back channel threshold voltage,channel edge leakage,ESD,and radiation hardness characteristics in SOI devices,we propose some methods to improve SOI device and circuit performance as followings:Body contact scheme is the best way to suppress FBE;BF2/B ion implantation into front and back channels can module the threshold voltage of front channel and avoid the turn-on of back channel at the same time;The choice of gate type influences the performance of SOI devices severely;Shallow source region contributes to the reduction of β in parasitic npn bipolar transistor;Self-align-silicidation technology is helpful for the improvement of SOI device characteristics.The total dose of hardened nMOS reaches 1E6rad(Si) in our study.-
Keywords:
- SOI,
- floating body effect,
- channel,
- radiation hardness
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References
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Proportional views
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