Chin. J. Semicond. > 1999, Volume 20 > Issue 10 > 857-861
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快速退火Mg∶GaN的光致发光研究

毛祥军 , 杨志坚 , 金泗轩 , 童玉珍 , 王晶晶 , 李非 and 张国义

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    Received: 19 August 2015 Revised: Online: Published: 01 October 1999

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      Article Navigation >  Journal of Semiconductors  > 1999  >  20(10): 857-861
      毛祥军, 杨志坚, 金泗轩, 童玉珍, 王晶晶, 李非, 张国义. 快速退火Mg∶GaN的光致发光研究[J]. 半导体学报(英文版), 1999, 20(10): 857-861.
      Citation:
      毛祥军, 杨志坚, 金泗轩, 童玉珍, 王晶晶, 李非, 张国义. 快速退火Mg∶GaN的光致发光研究[J]. 半导体学报(英文版), 1999, 20(10): 857-861.
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      • Received Date: 2015-08-19

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