Monolithically Integrated Optoelectronic Receivers Implemented in 0.25μm MS/RF CMOS

Chen Hongda; Gao Peng; Mao Luhong; Huang Jiale

Chin. J. Semicond. > 2006, Volume 27 > Issue 2 > 323-327

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Monolithically Integrated Optoelectronic Receivers Implemented in 0.25μm MS/RF CMOS

Chen Hongda, Gao Peng, Mao Luhong and Huang Jiale

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Abstract: A monolithically integrated optoelectronic receiver is presented.A silicon-based photo-diode and receiver circuits are integrated on identical substrates in order to eliminate the parasitics induced by hybrid packaging.Implemented in the present deep sub-micron MS/RF (mixed signal,radio frequency) CMOS,this monolithically OEIC takes advantage of several new features to improve the performance of the photo-diode and eventually the whole OEIC.

Key words: monolithically integrated, OEIC, CMOS process

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Received: 20 August 2015 Revised: Online: Published: 01 February 2006

A monolithically integrated optoelectronic receiver is presented.A silicon-based photo-diode and receiver circuits are integrated on identical substrates in order to eliminate the parasitics induced by hybrid packaging.Implemented in the present deep sub-micron MS/RF (mixed signal,radio frequency) CMOS,this monolithically OEIC takes advantage of several new features to improve the performance of the photo-diode and eventually the whole OEIC.

Monolithically Integrated Optoelectronic Receivers Implemented in 0.25μm MS/RF CMOS

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