Chin. J. Semicond. > 1988, Volume 9 > Issue 1 > 103-108
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氢化非晶硅中光致亚稳性退化的物理机制

秦国刚 and 孔光临

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    Received: 19 August 2015 Revised: Online: Published: 01 January 1988

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      Article Navigation >  Journal of Semiconductors  > 1988  >  9(1): 103-108
      秦国刚, 孔光临. 氢化非晶硅中光致亚稳性退化的物理机制[J]. 半导体学报(英文版), 1988, 9(1): 103-108.
      Citation:
      秦国刚, 孔光临. 氢化非晶硅中光致亚稳性退化的物理机制[J]. 半导体学报(英文版), 1988, 9(1): 103-108.
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      • Received Date: 2015-08-19

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