Chin. J. Semicond. > 1988, Volume 9 > Issue 1 > 103-108
|

CONTENTS

氢化非晶硅中光致亚稳性退化的物理机制

秦国刚 and 孔光临

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2463 Times PDF downloads: 846 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 January 1988

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1988  >  9(1): 103-108
      秦国刚, 孔光临. 氢化非晶硅中光致亚稳性退化的物理机制[J]. 半导体学报(英文版), 1988, 9(1): 103-108.
      Citation:
      秦国刚, 孔光临. 氢化非晶硅中光致亚稳性退化的物理机制[J]. 半导体学报(英文版), 1988, 9(1): 103-108.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return