| Citation: |
Wang Chao, Zhang Yuming, Zhang Yimen. Characteristics of Vanadium Ion-Implanted Layer of 4H-SiC[J]. Journal of Semiconductors, 2006, 27(S1): 120-123.
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Wang C, Zhang Y M, Zhang Y M. Characteristics of Vanadium Ion-Implanted Layer of 4H-SiC[J]. Chin. J. Semicond., 2006, 27(13): 120.
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Characteristics of Vanadium Ion-Implanted Layer of 4H-SiC
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Abstract
Semi-insulating layers could be successfully formed by vanadium ion (V+) implantation in 4H-SiC.The fabrication processes and characteristics of the implanted layer are developed in details.The profile of implantation depth is simulated using the Monte Carlo simulator TRIM.Resistivity measurements are performed for the semi-insulating 4H-SiC samples.The resistivity of V+-implanted layer is strongly dependent on the conduction type of initial 4H-SiC sample.The resistivity at room temperature is about 1.2E9～1.6E10Ω·cm and 2.0E6～7.6E6Ω·cm for p- and n-type samples,respectively.-
Keywords:
- SiC,
- semi-insulating,
- vanadium ion implantation
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References
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Proportional views
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