| Citation: |
Zhao Youwen, Dong Zhiyuan, Sun Wenrong, Duan Manlong, Yang Zixiang, Lü Xuru. Defect Control and High Quality Surface Preparation of InP Substrate[J]. Journal of Semiconductors, 2006, 27(12): 2127-2133.
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Zhao Y W, Dong Z Y, Sun W R, Duan M L, Yang Z X, Lü X. Defect Control and High Quality Surface Preparation of InP Substrate[J]. Chin. J. Semicond., 2006, 27(12): 2127.
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Defect Control and High Quality Surface Preparation of InP Substrate
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Abstract
Defects and their influence on InP single crystal substrate arc investigated.Results on cluster dislocation and its deterioration on lattice perfection,pit-like micro-defects,residual damage, and impurities and their removal by cleaning are presented.Formation mechanisms of the defects and approaches to suppressing them are discussed.Finally,epi-ready InP polished single crystal wafer with high lattice perfection,free of surface damage,is obtained.-
Keywords:
- indium phosphide,
- defect,
- substrate,
- polishing
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References
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Proportional views
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