Chin. J. Semicond. > 2002, Volume 23 > Issue 6 > 593-598
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在Si(111)上磁控溅射碳化硅薄膜的H_2退火效应

安霞 , 庄惠照 , 杨莺歌 , 李怀祥 and 薛成山

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Key words: 磁控溅射, 碳化硅, 薄膜, 氢退火, 碳纳米线

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    Received: 19 August 2015 Revised: Online: Published: 01 June 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(6): 593-598
      安霞, 庄惠照, 杨莺歌, 李怀祥, 薛成山. 在Si(111)上磁控溅射碳化硅薄膜的H_2退火效应[J]. 半导体学报(英文版), 2002, 23(6): 593-598.
      Citation:
      安霞, 庄惠照, 杨莺歌, 李怀祥, 薛成山. 在Si(111)上磁控溅射碳化硅薄膜的H_2退火效应[J]. 半导体学报(英文版), 2002, 23(6): 593-598.
      shu

      • Received Date: 2015-08-19

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