Chin. J. Semicond. > 2002, Volume 23 > Issue 1 > 30-33
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金属-铁电体-GaN结构研究

毕朝霞 , 张荣 , 李卫平 , 殷江 , 沈波 , 周玉刚 , 陈鹏 , 陈志忠 , 顾书林 , 施毅 , 刘治国 and 郑有炓

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Key words: GaN, PZT, MFS, MOCVD, PLD

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    Received: 19 August 2015 Revised: Online: Published: 01 January 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(1): 30-33
      毕朝霞, 张荣, 李卫平, 殷江, 沈波, 周玉刚, 陈鹏, 陈志忠, 顾书林, 施毅, 刘治国, 郑有炓. 金属-铁电体-GaN结构研究[J]. 半导体学报(英文版), 2002, 23(1): 30-33.
      Citation:
      毕朝霞, 张荣, 李卫平, 殷江, 沈波, 周玉刚, 陈鹏, 陈志忠, 顾书林, 施毅, 刘治国, 郑有炓. 金属-铁电体-GaN结构研究[J]. 半导体学报(英文版), 2002, 23(1): 30-33.
      shu

      • Received Date: 2015-08-19

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