| Citation: |
Li Xianjie, Zhao Yonglin, Cai Daomin, Zeng Qingming, Pu Yunzhang, Guo Yana, Wang Zhigong, Wang Rong, Qi Ming, Chen Xiaojie, Xu Anhuai. Monolithically Integrated Long Wavelength Photoreceiver OEIC Based on InP/InGaAs HBT Technology’[J]. Journal of Semiconductors, 2007, 28(S1): 520-524.
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Li X J, Zhao Y L, Cai D M, Zeng Q M, Pu Y Z, Guo Y N, Wang Z G, Wang R, Qi M, Chen X J, Xu A H. Monolithically Integrated Long Wavelength Photoreceiver OEIC Based on InP/InGaAs HBT Technology’[J]. Chin. J. Semicond., 2007, 28(S1): 520.
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Monolithically Integrated Long Wavelength Photoreceiver OEIC Based on InP/InGaAs HBT Technology’
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Abstract
The epitaxial structure and growth，circuit design，fabricating process and characterization are described for the photoreceiver oEIC based on InP/InGaAs HBT/PIN photodetector integration scheme.A 1.55μm wavelength monolithically integrated photoreceiver OEIC is demonstrated with self-aligned InP/InGaAs HBT process.The InP/InGaAs HBT with a 2μm x 8μm emitter contact showed a DC gain of 40，a DC gain cutoff frequency of 45GHz and a maximum frequency of os. cillation of 54GHz.The integrated InGaAs photodetector exhibited a responsivity of 0.45A/W at A=1.55“m，a dark current less than 10hA at a bias of -5V and a -3dB bandwidth of 10.6GHz.Clear and opening eye diagrams were obtained for a NRZ 2^23一1 pseudorandom code at both 2.5 and 3.0Gb/s.The sensitivity for a bit error ratio of BER=10-9 at 2.5Gb/s is leSS than -15.2dBm.-
Keywords:
- InP/InGaAs HBT,
- PIN,
- photoreceiVer,
- OEIC,
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References
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Proportional views
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