Chin. J. Semicond. > 2000, Volume 21 > Issue 5 > 460-464
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采用CoSi_2SALICIDE结构CMOS/SOI器件辐照特性的实验研究

张兴 , 黄如 and 王阳元

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Key words: CMOS/SOI, SALICIDE, 辐照特性

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    Received: 20 August 2015 Revised: Online: Published: 01 May 2000

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      Article Navigation >  Journal of Semiconductors  > 2000  >  21(5): 460-464
      张兴, 黄如, 王阳元. 采用CoSi_2SALICIDE结构CMOS/SOI器件辐照特性的实验研究[J]. 半导体学报(英文版), 2000, 21(5): 460-464.
      Citation:
      张兴, 黄如, 王阳元. 采用CoSi_2SALICIDE结构CMOS/SOI器件辐照特性的实验研究[J]. 半导体学报(英文版), 2000, 21(5): 460-464.
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      • Received Date: 2015-08-20

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