Chin. J. Semicond. > 1987, Volume 8 > Issue 2 > 204-206
|

CONTENTS

掺铟低位错密度的半绝缘砷化镓

林兰英 , 叶式中 , 何宏家 and 曹福年

+ Author Affiliations

PDF

    • Search

    Advanced Search >>

    GET CITATION

    shu

    Export: BibTex EndNote

    Article Metrics

    Article views: 2600 Times PDF downloads: 1043 Times Cited by: 0 Times

    History

    Received: 19 August 2015 Revised: Online: Published: 01 February 1987

    Catalog

      Email This Article

      User name:
      Email:*请输入正确邮箱
      Code:*验证码错误
      Send
      Article Navigation >  Journal of Semiconductors  > 1987  >  8(2): 204-206
      林兰英, 叶式中, 何宏家, 曹福年. 掺铟低位错密度的半绝缘砷化镓[J]. 半导体学报(英文版), 1987, 8(2): 204-206.
      Citation:
      林兰英, 叶式中, 何宏家, 曹福年. 掺铟低位错密度的半绝缘砷化镓[J]. 半导体学报(英文版), 1987, 8(2): 204-206.
      shu

      • Received Date: 2015-08-19

      Catalog

        Journal of Semiconductors © 2017 All Rights Reserved   京ICP备05085259号-2

        /

        DownLoad:  Full-Size Img  PowerPoint
        Return
        Return