A Monolithic InGaP/GaAs HBT PA for TD-SCDMA Handset Application

Bi Xiaojun; Zhang Haiying; Chen Liqiang; Huang Qinghua

J. Semicond. > 2008, Volume 29 > Issue 10 > 1868-1872

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A Monolithic InGaP/GaAs HBT PA for TD-SCDMA Handset Application

Bi Xiaojun, Zhang Haiying, Chen Liqiang and Huang Qinghua

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Abstract: This paper demonstrates the design and fabrication of a monolithic HBT power amplifier for TD-SCDMA cellular phones that achieves high efficiency and linearity.The two-stage MMIC integrates the input matching circuits,inter-stage matching circuits,and active bias circuits in a single chip with size as small as 0.91mm×0.98mm.The amplifier obtains a power-added efficiency of 43% (15%) and a gain of 28.5dB (24dB) at the high and low operation mode under the 3.4V supply.In addition,the adjacent channel leakage power is below -45dBc/-56dBc and -39dBc/-50dBc at 1.6MHz/3.2MHz offset in low and high power output modes,respectively,with QPSK modulation.The MMIC offers the potential for low cost production due to small chip size,stable voltage supply,and high performance at the same time.

Key words: TD-SCDMA, power amplifier, InGaP/GaAs HBT, PAE, ACPR

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Received: 18 August 2015 Revised: 19 June 2008 Online: Published: 01 October 2008

This paper demonstrates the design and fabrication of a monolithic HBT power amplifier for TD-SCDMA cellular phones that achieves high efficiency and linearity.The two-stage MMIC integrates the input matching circuits,inter-stage matching circuits,and active bias circuits in a single chip with size as small as 0.91mm×0.98mm.The amplifier obtains a power-added efficiency of 43% (15%) and a gain of 28.5dB (24dB) at the high and low operation mode under the 3.4V supply.In addition,the adjacent channel leakage power is below -45dBc/-56dBc and -39dBc/-50dBc at 1.6MHz/3.2MHz offset in low and high power output modes,respectively,with QPSK modulation.The MMIC offers the potential for low cost production due to small chip size,stable voltage supply,and high performance at the same time.

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