Chin. J. Semicond. > 1999, Volume 20 > Issue 12 > 1093-1097
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背栅效应对GaAsMESFETV_(th)均匀性的影响

刘汝萍 , 赵建龙 , 夏冠群 , 吴剑萍 , 顾成余 and 詹琰

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    Received: 19 August 2015 Revised: Online: Published: 01 December 1999

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      Article Navigation >  Journal of Semiconductors  > 1999  >  20(12): 1093-1097
      刘汝萍, 赵建龙, 夏冠群, 吴剑萍, 顾成余, 詹琰. 背栅效应对GaAsMESFETV_(th)均匀性的影响[J]. 半导体学报(英文版), 1999, 20(12): 1093-1097.
      Citation:
      刘汝萍, 赵建龙, 夏冠群, 吴剑萍, 顾成余, 詹琰. 背栅效应对GaAsMESFETV_(th)均匀性的影响[J]. 半导体学报(英文版), 1999, 20(12): 1093-1097.
      shu

      • Received Date: 2015-08-19

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