Chin. J. Semicond. > 1995, Volume 16 > Issue 8 > 581-586
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金属有机化学气相沉积GaAs／Si外延层中的深能级发光对温度的依赖关系

赵家龙，高瑛，刘学彦，苏锡安，梁家昌，高鸿楷，龚平，王海滨

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    Received: 19 August 2015 Revised: Online: Published: 01 August 1995

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      Article Navigation >  Journal of Semiconductors  > 1995  >  16(8): 581-586
      赵家龙，高瑛，刘学彦，苏锡安，梁家昌，高鸿楷，龚平，王海滨. 金属有机化学气相沉积GaAs／Si外延层中的深能级发光对温度的依赖关系[J]. 半导体学报(英文版), 1995, 16(8): 581-586.
      Citation:
      赵家龙，高瑛，刘学彦，苏锡安，梁家昌，高鸿楷，龚平，王海滨. 金属有机化学气相沉积GaAs／Si外延层中的深能级发光对温度的依赖关系[J]. 半导体学报(英文版), 1995, 16(8): 581-586.
      shu

      • Received Date: 2015-08-19

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