Chin. J. Semicond. > 2003, Volume 24 > Issue S1 > 153-160

High Performance 42nm Gate Length CMOS Device

Xu Qiuxia, Qian He, Han Zhengsheng, Liu Ming, Hou Ruibing, Chen Baoqing, Jiang Haojie, Zhao Yuyin and Wu Dexin

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Abstract: 20~ 50nm CMOS device structure and the key technologies are investigated. By these innovations of technologies, high performance 42nm gate length CMOS devices and 48nm gate 1ength CMOS ring oscillators are fabricated successfully. At supply power voltage VDD of 1. 5V, the drive current lon of 42nm gate length CMOS are 745pA/pm for NMOS and 530pA/pm for PMOS at off-state leakage loff of 3. 5 nA/pm for NMOS and 15pA/pm for PMOS. The Sub-threshold slope of 72mV/ Dec and DIBL of 34mV/V for NMOS and Sub-thresho1d S1ope of 82mV/Dec and DIBL of 57mV/V for PMOS are obtained. 48nm gate length 57 Stage CMOS ring oscillator exhibits per-stage delay of 19. 9ps at 1. 5V.

Key words: 42nm gate length

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    Received: 16 March 2016 Revised: Online: Published: 01 January 2003

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      Xu Qiuxia, Qian He, Han Zhengsheng, Liu Ming, Hou Ruibing, Chen Baoqing, Jiang Haojie, Zhao Yuyin, Wu Dexin. High Performance 42nm Gate Length CMOS Device[J]. Journal of Semiconductors, 2003, 24(S1): 153-160. ****Xu Q X, Qian H, Han Z S, Liu M, Hou R B, Chen B Q, Jiang H J, Zhao Y Y, Wu D X. High Performance 42nm Gate Length CMOS Device[J]. Chin. J. Semicond., 2003, 24(S1): 153.
      Citation:
      Xu Qiuxia, Qian He, Han Zhengsheng, Liu Ming, Hou Ruibing, Chen Baoqing, Jiang Haojie, Zhao Yuyin, Wu Dexin. High Performance 42nm Gate Length CMOS Device[J]. Journal of Semiconductors, 2003, 24(S1): 153-160. ****
      Xu Q X, Qian H, Han Z S, Liu M, Hou R B, Chen B Q, Jiang H J, Zhao Y Y, Wu D X. High Performance 42nm Gate Length CMOS Device[J]. Chin. J. Semicond., 2003, 24(S1): 153.

      High Performance 42nm Gate Length CMOS Device

      • Received Date: 2016-03-16
      • Published Date: 2016-03-15

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