Chin. J. Semicond. > 1991, Volume 12 > Issue 2 > 83-100
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B~+、P~+离子注入p-Si中产生的缺陷及其退火特性的DLTS研究

孙璟兰 , 李名复 and 陈建新

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    Received: 19 August 2015 Revised: Online: Published: 01 February 1991

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      Article Navigation >  Journal of Semiconductors  > 1991  >  12(2): 83-100
      孙璟兰, 李名复, 陈建新. B~+、P~+离子注入p-Si中产生的缺陷及其退火特性的DLTS研究[J]. 半导体学报(英文版), 1991, 12(2): 83-100.
      Citation:
      孙璟兰, 李名复, 陈建新. B~+、P~+离子注入p-Si中产生的缺陷及其退火特性的DLTS研究[J]. 半导体学报(英文版), 1991, 12(2): 83-100.
      shu

      • Received Date: 2015-08-19

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