Chin. J. Semicond. > 2003, Volume 24 > Issue 7 > 718-722
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半绝缘砷化镓单晶中的晶体缺陷

徐岳生 , 张春玲 , 刘彩池 , 唐蕾 , 王海云 and 郝景臣

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Key words: SI-GaAs, 微缺陷, 位错

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    Received: 20 August 2015 Revised: Online: Published: 01 July 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(7): 718-722
      徐岳生, 张春玲, 刘彩池, 唐蕾, 王海云, 郝景臣. 半绝缘砷化镓单晶中的晶体缺陷[J]. 半导体学报(英文版), 2003, 24(7): 718-722.
      Citation:
      徐岳生, 张春玲, 刘彩池, 唐蕾, 王海云, 郝景臣. 半绝缘砷化镓单晶中的晶体缺陷[J]. 半导体学报(英文版), 2003, 24(7): 718-722.
      shu

      • Received Date: 2015-08-20

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