Chin. J. Semicond. > 1994, Volume 15 > Issue 2 > 103-108
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三元合金(GaSb)1－xGe2x，(InP)1－xGe2x的亚稳有序无序相变以及相变对于能隙的影响

倪军，顾秉林，朱嘉麟

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    Received: 18 August 2015 Revised: Online: Published: 01 February 1994

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      Article Navigation >  Journal of Semiconductors  > 1994  >  15(2): 103-108
      倪军，顾秉林，朱嘉麟. 三元合金(GaSb)1－xGe2x，(InP)1－xGe2x的亚稳有序无序相变以及相变对于能隙的影响[J]. 半导体学报(英文版), 1994, 15(2): 103-108.
      Citation:
      倪军，顾秉林，朱嘉麟. 三元合金(GaSb)1－xGe2x，(InP)1－xGe2x的亚稳有序无序相变以及相变对于能隙的影响[J]. 半导体学报(英文版), 1994, 15(2): 103-108.
      shu

      • Received Date: 2015-08-18

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