Chin. J. Semicond. > 1995, Volume 16 > Issue 7 > 546-551
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硅中低能大倾斜角砷注入的损伤行为及其退火特性

何治平，周祖尧，徐宏来，林成鲁

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    Received: 19 August 2015 Revised: Online: Published: 01 July 1995

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      Article Navigation >  Journal of Semiconductors  > 1995  >  16(7): 546-551
      何治平，周祖尧，徐宏来，林成鲁. 硅中低能大倾斜角砷注入的损伤行为及其退火特性[J]. 半导体学报(英文版), 1995, 16(7): 546-551.
      Citation:
      何治平，周祖尧，徐宏来，林成鲁. 硅中低能大倾斜角砷注入的损伤行为及其退火特性[J]. 半导体学报(英文版), 1995, 16(7): 546-551.
      shu

      • Received Date: 2015-08-19

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