Chin. J. Semicond. > 1999, Volume 20 > Issue 7 > 612-618

Analytical Calculation of Avalanche Breakdown Voltage of the Single-Diffused Junction Based on Double-sided Asymmetric Linearly Graded Approximation

He , Jin，Wang , Xin，Chen and Xingbi

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Received: 20 August 2015 Revised: Online: Published: 01 July 1999

Article Navigation > Journal of Semiconductors > 1999 > 20(7): 612-618

He, Jin，Wang, Xin，Chen, Xingbi. Analytical Calculation of Avalanche Breakdown Voltage of the Single-Diffused Junction Based on Double-sided Asymmetric Linearly Graded Approximation[J]. 半导体学报(英文版), 1999, 20(7): 612-618.

Citation:

He, Jin，Wang, Xin，Chen, Xingbi. Analytical Calculation of Avalanche Breakdown Voltage of the Single-Diffused Junction Based on Double-sided Asymmetric Linearly Graded Approximation[J]. 半导体学报(英文版), 1999, 20(7): 612-618.

He, Jin，Wang, Xin，Chen, Xingbi. Analytical Calculation of Avalanche Breakdown Voltage of the Single-Diffused Junction Based on Double-sided Asymmetric Linearly Graded Approximation[J]. 半导体学报(英文版), 1999, 20(7): 612-618.

Citation:

He, Jin，Wang, Xin，Chen, Xingbi. Analytical Calculation of Avalanche Breakdown Voltage of the Single-Diffused Junction Based on Double-sided Asymmetric Linearly Graded Approximation[J]. 半导体学报(英文版), 1999, 20(7): 612-618.

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