Fig. 1.
Frequency doubler design flow chart.
DownLoad:
| Citation: |
Changfei Yao, Ming Zhou, Yunsheng Luo, Jiao Li, Conghai Xu. W-band high output power Schottky diode doublers with quartz substrate[J]. Journal of Semiconductors, 2013, 34(12): 125004. doi: 10.1088/1674-4926/34/12/125004
****
C F Yao, M Zhou, Y S Luo, J Li, C H Xu. W-band high output power Schottky diode doublers with quartz substrate[J]. J. Semicond., 2013, 34(12): 125004. doi: 10.1088/1674-4926/34/12/125004.
|
W-band high output power Schottky diode doublers with quartz substrate
DOI: 10.1088/1674-4926/34/12/125004
More Information
-
Abstract
W-band quartz based high output power fix-tuned doublers are analyzed and designed with planar Schottky diodes. Full-wave analysis is carried out to find diode embedding impedances with a lumped port to model the nonlinear junction. Passive networks of the circuit, such as the low pass filter, the E-plane waveguide to strip transitions, input and output matching networks, and passive diode parts are analyzed by using electromagnetic simulators, and the different parts are then combined and optimized together. The exported S-parameters of the doubler circuit are used for multiply efficiency analysis. The highest measured output power is 29.5 mW at 80 GHz and higher than 15 mW in 76-94 GHz. The highest measured efficiency is 11.5% at 92.5 GHz, and the typical value is 6.0% in 70-100 GHz. -
References
[1] Porterfield D W, Crowe T W, Bradley R F, et al. A high-power fixed-turned millimeter-wave balanced frequency doubler. IEEE Trans Microw Theory Tech, 1999, 47(4):419 doi: 10.1109/22.754875[2] Maestrini A, Ward J, Gill J, et al. A 1.7 to 1.9 THz local oscillator source. IEEE Trans Microw Wireless Compon Lett, 2004, 14(6):253 doi: 10.1109/LMWC.2004.828027[3] Maestrini A, Ward J S, Javadi H, et al. Local oscillator chain for 1.55 to 1.75 THz with 100μ W peak power. IEEE Trans Microw Wireless Compon Lett, 2005, 15(12):871 doi: 10.1109/LMWC.2005.859989[4] Maestrini A, Ward J S, Gill J J, et al. A 540-640-GHz high-efficiency four-anode frequency tripler. IEEE Trans Microw Theory Tech, 2005, 53(9):2835 doi: 10.1109/TMTT.2005.854174[5] Xiao Q, Hesel J L, Crowe T W, et al. A 270 GHz tuner-less heterostructure barrier varactor frequency triplier. IEEE Trans Microw Wireless Compon Lett, 2007, 17(4):241 doi: 10.1109/LMWC.2007.892932[6] Maestrini A, Ward J S, Chattopadhyay G, et al. THz sources based on frequency multiplication and their applications. J RF-Eng Telecommun, 2008, 5(6):118 https://www.degruyter.com/view/j/freq.2008.62.5-6/freq.2008.62.5-6.118/freq.2008.62.5-6.118.xml[7] Maestrini A, Ward J S, Charlotte T C, et al. In-phase power-combined frequency triplers at 300 GHz. IEEE Trans Microw Wireless Compon Lett, 2008, 18(3):218 doi: 10.1109/LMWC.2008.916820[8] Bryllert T, Malko A, Vukusic J, et al. A 175 GHz HBV frequency quintupler with 60 mW output power. IEEE Trans Microw Wireless Compon Lett, 2012, 22(2):76 doi: 10.1109/LMWC.2011.2181494[9] Chattopadhyay G. Technology, capabilities, and performance of low power terahertz sources. IEEE Trans Microw Theory Tech, 2011, 1(1):33 http://ieeexplore.ieee.org/document/6005327/[10] Papapolymerou J, East J, Katehi L P B. A high-power W-band monolithic FGC doubler. IEEE Trans Microw Wireless Compon Lett, 2000, 10(5):195 http://ieeexplore.ieee.org/document/850375/authors[11] [12] [OL]: http://www.vadiodes.com/.[13] Bryllert T, Vukusic J, Emadi T A, et al. A high-power frequency tripler for 100 GHz. Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006:18 http://ieeexplore.ieee.org/document/4221973/?reload=true&arnumber=4221973&contentType=Conference%20Publications[14] Yao C F, Zhou M, Luo Y S, et al. Millimeter wave fixed-tuned subharmonic mixers with planar Schottky diodes. Journal of Semiconductors, 2012, 33(11):115007 doi: 10.1088/1674-4926/33/11/115007 -
Proportional views
