Chin. J. Semicond. > 2002, Volume 23 > Issue 12 > 1249-1253
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4H-SiCN离子注入层的特性(英文)

王守国 , 张义门 , 张玉明 and 杨林安

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Key words: SiC, 离子注入, 退火, 方块电阻

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    Received: 19 August 2015 Revised: Online: Published: 01 December 2002

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      Article Navigation >  Journal of Semiconductors  > 2002  >  23(12): 1249-1253
      王守国, 张义门, 张玉明, 杨林安. 4H-SiCN离子注入层的特性(英文)[J]. 半导体学报(英文版), 2002, 23(12): 1249-1253.
      Citation:
      王守国, 张义门, 张玉明, 杨林安. 4H-SiCN离子注入层的特性(英文)[J]. 半导体学报(英文版), 2002, 23(12): 1249-1253.
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      • Received Date: 2015-08-19

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