Investigation of a Type of Organic/Metal Schottky Diode

Guo Wenge; Zhang Yancao; Zheng Jianbang; Ren Ju

Chin. J. Semicond. > 2006, Volume 27 > Issue 3 > 545-550

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Investigation of a Type of Organic/Metal Schottky Diode

Guo Wenge, Zhang Yancao, Zheng Jianbang and Ren Ju

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Abstract: An effective preparation method is proposed for a type of organic/metal Schottky diode.An organic film,3,4∶9,10 perylenetetracarboxylic dianhydride (PTCDA) , and a metal electrode Au are deposited on the ITO respectively with a simple vacuum evaporation technology.The I-V properties of the diode,measured at room temperature,show that the commutating coefficient of the devices reaches 1E4.According to standard Schottky theory and the measurements of capacitance-frequency and capacitance-voltage,we can conclude that the organic Schottky potential is about 0.2～0.3eV.

Key words: Schottky diode, vapor phase deposition, organic film, capacitance-frequency

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Guo Wenge, Zhang Yancao, Zheng Jianbang, Ren Ju. Investigation of a Type of Organic/Metal Schottky Diode[J]. Journal of Semiconductors, 2006, 27(3): 545-550.

Guo W G, Zhang Y C, Zheng J B, Ren J. Investigation of a Type of Organic/Metal Schottky Diode[J]. Chin. J. Semicond., 2006, 27(3): 545.

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Received: 20 August 2015 Revised: Online: Published: 01 March 2006

An effective preparation method is proposed for a type of organic/metal Schottky diode.An organic film,3,4∶9,10 perylenetetracarboxylic dianhydride (PTCDA) , and a metal electrode Au are deposited on the ITO respectively with a simple vacuum evaporation technology.The I-V properties of the diode,measured at room temperature,show that the commutating coefficient of the devices reaches 1E4.According to standard Schottky theory and the measurements of capacitance-frequency and capacitance-voltage,we can conclude that the organic Schottky potential is about 0.2～0.3eV.

Investigation of a Type of Organic/Metal Schottky Diode

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