Abstract: An effective preparation method is proposed for a type of organic/metal Schottky diode.An organic film,3,4∶9,10 perylenetetracarboxylic dianhydride (PTCDA) , and a metal electrode Au are deposited on the ITO respectively with a simple vacuum evaporation technology.The I-V properties of the diode,measured at room temperature,show that the commutating coefficient of the devices reaches 1E4.According to standard Schottky theory and the measurements of capacitance-frequency and capacitance-voltage,we can conclude that the organic Schottky potential is about 0.2～0.3eV.

Key words: Schottky diode, vapor phase deposition, organic film, capacitance-frequency