Chin. J. Semicond. > 1995, Volume 16 > Issue 4 > 303-308
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真空紫外光直接光CVD法低温生长SiO_2薄膜及其性质

杜开英，陈义

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    Received: 19 August 2015 Revised: Online: Published: 01 April 1995

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      Article Navigation >  Journal of Semiconductors  > 1995  >  16(4): 303-308
      杜开英，陈义. 真空紫外光直接光CVD法低温生长SiO_2薄膜及其性质[J]. 半导体学报(英文版), 1995, 16(4): 303-308.
      Citation:
      杜开英，陈义. 真空紫外光直接光CVD法低温生长SiO_2薄膜及其性质[J]. 半导体学报(英文版), 1995, 16(4): 303-308.
      shu

      • Received Date: 2015-08-19

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