| Citation: |
Shi Wenhua, Luo Liping, Zhao Lei, Zuo Yuhua, Wang Qiming. Rapid Thermal Annealing Characteristics of the Ge/Si(001)Nano-Island Multilayer[J]. Journal of Semiconductors, 2006, 27(S1): 136-139.
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Shi W H, Luo L P, Zhao L, Zuo Y H, Wang Q M. Rapid Thermal Annealing Characteristics of the Ge/Si(001)Nano-Island Multilayer[J]. Chin. J. Semicond., 2006, 27(13): 136.
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Rapid Thermal Annealing Characteristics of the Ge/Si(001)Nano-Island Multilayer
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Abstract
The rapid thermal annealing characteristics of the Ge/Si(001) multilayer nano-islands material are investigated by X-ray diffraction and photoluminescence measurements.It is found that the thermal activated Ge/Si atom interdiffusion in nano-island region is much stronger than that in wetting layer.And the interdiffusion becomes stronger;the crystal quality begins deteriorating when the annealing time is larger.If the material is annealed at 800℃ for about 10s,Ge/Si atom interdiffusion is relatively small and the crystal quality keeps good.Meanwhile,it can activate over 50% of the impurities which are implanted by ion beams-
Keywords:
- Si,
- Ge,
- nano-island,
- annealing,
- ion implant
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References
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Proportional views
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