| Citation: |
Yan Jianfeng, Zhang Jie, Guo Liwei, Zhu Xueliang, Peng Mingzeng, Jia Haiqiang, Chen Hong, Zhou Junming. Growth and Stress Analysis of a-Plane GaN Films Grown on r-Plane Sapphire Substrate with a Two-Step AlN Buffer Layer[J]. Journal of Semiconductors, 2007, 28(10): 1562-1567.
****
Yan J F, Zhang J, Guo L W, Zhu X L, Peng M Z, Jia H Q, Chen H, Zhou J M. Growth and Stress Analysis of a-Plane GaN Films Grown on r-Plane Sapphire Substrate with a Two-Step AlN Buffer Layer[J]. Chin. J. Semicond., 2007, 28(10): 1562.
|
Growth and Stress Analysis of a-Plane GaN Films Grown on r-Plane Sapphire Substrate with a Two-Step AlN Buffer Layer
-
Abstract
a-plane GaN films were grown on r-plane sapphire substrates by metalorganic chemical vapor deposition with a two-step AlN buffer layer.High-resolution X-ray diffraction and micro-Raman scattering were used to analyze the residual strain and crystalline quality of the as-grown samples.The on-axis full width at half maximum value (FWHM) of the X-ray rocking curve is 0.193°,and the FWHM of the E2 -high energy peak is 3.9cm-1,indicating that the as-grown sample is of high quality.The orientation of the a-plane GaN with respect to r-plane sapphire substrate is confirmed to be ［1120］GaN‖［1102］sapphire,［0001］GaN‖[1101］sapphire and ［1100］GaN‖［1120］sapphire.The residual stress of the a-plane GaN grown with two-step AlN buffer is different from that of thea-plane GaN grown with a low-temperature GaN buffer,due to the effects of the AlN buffer,which has a larger thermal mismatch to sapphire than that of GaN.-
Keywords:
- GaN,
- non-polar,
- X-ray diffraction,
- Raman spectrum,
- residual stress
-
References
-
Proportional views
DownLoad: