Chin. J. Semicond. > 2007, Volume 28 > Issue S1 > 190-192
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Heteroepitaxy of InP/GaAs by MOCVD

Zhou Jing, Wang Qi, Xiong Deping, Cai Shiwei, Huang Hui, Huang Yongqing and Ren Xiaomin

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Abstract: InP is grown on GaAs substrate by metalorganic chemical vapor deposition(MOCVD).The InP low temperature buffer layer is firstly deposited on the substrate followed by the InP epitaxial layer.It is found that the buffer layer’s grown at 450"C with 15nm thickness could obtain high quality InP epitaxial layer.Furthermore，with increasing the epitaxial layer's thickness，the sample's crystalline quality is enhanced.Finally，the double crystal X·ray diffraction (DCXRD) measurement with off20 scan shows that the annealed sample can obtain the full width at half maximum (FWHM)of 238.5".

Key words: heteroepitaxy, InP, GaAs, MOCVD, low temperature buffer

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    Received: 27 May 2016 Revised: Online: Published: 01 January 2007

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      Article Navigation >  Journal of Semiconductors  > 2007  >  28(S1): 190-192
      Zhou Jing, Wang Qi, Xiong Deping, Cai Shiwei, Huang Hui, Huang Yongqing, Ren Xiaomin. Heteroepitaxy of InP/GaAs by MOCVD[J]. Journal of Semiconductors, 2007, 28(S1): 190-192. ****Zhou J, Wang Q, Xiong D P, Cai S W, Huang H, Huang Y Q, Ren X M. Heteroepitaxy of InP/GaAs by MOCVD[J]. Chin. J. Semicond., 2007, 28(S1): 190.
      Citation:
      Zhou Jing, Wang Qi, Xiong Deping, Cai Shiwei, Huang Hui, Huang Yongqing, Ren Xiaomin. Heteroepitaxy of InP/GaAs by MOCVD[J]. Journal of Semiconductors, 2007, 28(S1): 190-192. ****
      Zhou J, Wang Q, Xiong D P, Cai S W, Huang H, Huang Y Q, Ren X M. Heteroepitaxy of InP/GaAs by MOCVD[J]. Chin. J. Semicond., 2007, 28(S1): 190.
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      Heteroepitaxy of InP/GaAs by MOCVD

      • Key Laboratory of Optical Communication and Lightwave Technologies of the Ministry of Education, Beijing University of Posts and Telecommunications，Beijing 100876，China,Institute of Continuing Education，Beijing University of Posts and Telecommunications，Beijing 100876，China,Key Laboratory of Optical Communication and Lightwave Technologies of the Ministry of Education, Beijing University of Posts and Telecommunications，Beijing 100876，China,Key Laboratory of Optical Communication and Lightwave Technologies of the Ministry of Education, Beijing University of Posts and Telecommunications，Beijing 100876，China,Key Laboratory of Optical Communication and Lightwave Technologies of the Ministry of Education, Beijing University of Posts and Telecommunications，Beijing 100876，China,Institute of Continuing Education，Beijing University of Posts and Telecommunications，Beijing 100876，China and Key Laboratory of Optical Communication and Lightwave Technologies of the Ministry of Education, Beijing University of Posts and Telecommunications，Beijing 100876，China

      • Received Date: 2016-05-27
      • Published Date: 2016-04-28

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