Chin. J. Semicond. > 1991, Volume 12 > Issue 6 > 323-331

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电场下超晶格GaAs/Ga_(1-x)Al_xAs[111]的电子结构

范卫军 and 夏建白

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    Received: 19 August 2015 Revised: Online: Published: 01 June 1991

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      Article Navigation >  Journal of Semiconductors  > 1991  >  12(6): 323-331
      范卫军, 夏建白. 电场下超晶格GaAs/Ga_(1-x)Al_xAs[111]的电子结构[J]. 半导体学报(英文版), 1991, 12(6): 323-331.
      Citation:
      范卫军, 夏建白. 电场下超晶格GaAs/Ga_(1-x)Al_xAs[111]的电子结构[J]. 半导体学报(英文版), 1991, 12(6): 323-331.
      shu

      • Received Date: 2015-08-19

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