Chin. J. Semicond. > 1992, Volume 13 > Issue 1 > 1-7

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PICTS方法研究SI-GaAs中深能级缺陷性质

龚大卫 , 陆昉 and 孙恒慧

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    Received: 19 August 2015 Revised: Online: Published: 01 January 1992

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      Article Navigation >  Journal of Semiconductors  > 1992  >  13(1): 1-7
      龚大卫, 陆昉, 孙恒慧. PICTS方法研究SI-GaAs中深能级缺陷性质[J]. 半导体学报(英文版), 1992, 13(1): 1-7.
      Citation:
      龚大卫, 陆昉, 孙恒慧. PICTS方法研究SI-GaAs中深能级缺陷性质[J]. 半导体学报(英文版), 1992, 13(1): 1-7.
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      • Received Date: 2015-08-19

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