Chin. J. Semicond. > 2003, Volume 24 > Issue 12 > 1233-1238

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介电常数对比和填充率对光子晶体中光子禁带和局域态的调节(英文)

陈沁 , 黄永箴 , 国伟华 and 于丽娟

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Key words: 光子晶体, 光子禁带, 缺陷态, 有限时域差分法

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    Received: 20 August 2015 Revised: Online: Published: 01 December 2003

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      Article Navigation >  Journal of Semiconductors  > 2003  >  24(12): 1233-1238
      陈沁, 黄永箴, 国伟华, 于丽娟. 介电常数对比和填充率对光子晶体中光子禁带和局域态的调节(英文)[J]. 半导体学报(英文版), 2003, 24(12): 1233-1238.
      Citation:
      陈沁, 黄永箴, 国伟华, 于丽娟. 介电常数对比和填充率对光子晶体中光子禁带和局域态的调节(英文)[J]. 半导体学报(英文版), 2003, 24(12): 1233-1238.
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      • Received Date: 2015-08-20

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