| Citation: |
Cai Kunhuang, Zhang Yong, Li Cheng, Lai Hongkai, Chen Songyan. Preparation and Characterization of a SiGe Buffer Layer by Dry Oxidation[J]. Journal of Semiconductors, 2007, 28(12): 1937-1940.
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Cai K H, Zhang Y, Li C, Lai H K, Chen S Y. Preparation and Characterization of a SiGe Buffer Layer by Dry Oxidation[J]. Chin. J. Semicond., 2007, 28(12): 1937.
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Preparation and Characterization of a SiGe Buffer Layer by Dry Oxidation
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Abstract
An ultra-low dislocation density of 1.2e5cm-2,95% strain relaxed,compositionally graded SiGe layer formed by dry oxidizing the strained Si0.88Ge0.12 alloy on Si (100) substrates at 1000℃ was prepared.By comparing samples with various oxidation times,the relaxation mechanisms of the strained SiGe layers during the oxidation processes were analyzed.-
Keywords:
- oxidation,
- SiGe buffer layer,
- dislocation
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References
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Proportional views
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